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RJP30H1DPD

Silicon N Channel IGBT High speed power switching

4

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Vertrieb:20
gratis Versand

Vorratzustand: 74775

Mindestbestellmenge:1

Preis:
€0.53
zu Einkaufswagen hinzufügen
  • Verkapselung: TO-252
  • Marke: Renesas
  • ≥1: €0.53 €0.47
  • ≥10: €0.44 €0.39
  • ≥100: €0.42 €0.38

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Effiziente Auftragserteilung, Anfragen möglich

1. Description

This device is a N-channel Power MOSFETs made using the second generation of MDmesh? technology. 

This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one 

of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high 

efficiency converters.


 2.  Features

> Trench gate and thin wafer technology (G6H-II series)

> High speed switching: tr = 80 ns typ., tf = 150 ns typ.

> Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.

> Low leak current: ICES = 1 A max. 


Kommentare

  • 4.7

    Good packing

    Good packing

  • meujael mendez sanchez

    Piezas de calidad

    Piezas de calidad

  • gustavo real

    Thank you very much, the order...

    Thank you very much, the order was delivered very well, very good company, the order arrived at the appointed time and in good condition, from already thank you very much.
    I will provide some pictures of the item purchased.

    • Review Image
    • Review Image
  • Seamus Gilroy

    Thank you for excellect servic...

    Thank you for excellect service, Items arrived well packed and quite quickly considering the distance it had to travel.
    The P+P was reasonable and item prices excellent.
    Will certainly use your service again in the near future.

    • Review Image
    • Review Image
    • Review Image
    • Review Image
  • RJP30H1DPD

    very good

    RJP30H1DPD

    very good

  • RJP30H1DPD

    very good

    RJP30H1DPD

    very good

  • RJP30H1DPD

    very good

    RJP30H1DPD

    very good

  • RJP30H1DPD

    very good

    RJP30H1DPD

    very good

<<<1 >>>

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Verpackung

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  • Schritt2:in Gehäuse einsetzen

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